1. Xiong W.; Luo B.; Meng W.; Zhu B.; Wu X. and Ding S.-J., High performance 2T0C DRAM cells based on atomic-layer-deposited InAlZnO FETs, SCIENCE CHINA Information Sciences, 2024, 67 (9), 199401.
2. Luo B.; Zhang C.; Meng W.; Xiong W.; Yang M.; Yang L.; Zhu B.; Wu X. and Ding S.-J., Plasma-enhanced atomic layer deposition of Sn-doped indium oxide semiconductor nano-films for thin-film transistors, Nanotechnology, 2024, 35 (44), 445202.
3. Li L.; Zhu B.; Wu X. and Ding S.-J., Enhancement of Electrical Safe Operation Area of 60 V nLDMOS by Engineering of Reduced Surface Electrical Field in the Drift Region, Micromachines, 2024, 15 (7), 815.
4. Xiong W.; Luo B.B.; Meng W.; Wu X.H.; Zhu B. and Ding S.-J., Atomic-Layer-Deposited Ultrathin InAlZnO FETs-Based 2T0C DRAM Cells With Long Data Retention and Multilevel Storage, IEEE Transactions on Electron Devices, 2024, 71 (4), 2393-2398.
5. Teng J.H.; Chen Y.T.; Huang C.M.; Yang M.; Zhu B.; Liu W.-J.; Ding S.-J. and Wu X.H., Graded-Band-Gap Zinc–Tin Oxide Thin-Film Transistors with a Vertically Stacked Structure for Wavelength-Selective Photodetection, ACS Applied Materials & Interfaces, 2024, 16 (7), 9060-9067.
6. Luo B.B.; Wu X.H.; Meng W.; Xiong W.; Wang B.W.; Zhu B. and Ding S.-J., Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors With Robust Thermal Stability at 400 °C and Downscaling of Channel, IEEE Transactions on Electron Devices, 2024, 71 (5), 3026-3031.
1. Zheng G.; He Y.L.; Zhu B.; Wu X.H.; Zhang D.W. and Ding S.-J., Improvement of Voltage Linearity and Leakage Current of MIM Capacitors With Atomic Layer Deposited Ti-Doped ZrO2 Insulators, IEEE Transactions on Electron Devices, 2023, 70 (6), 3064-3070.
2. He Y.L.; Zheng G.; Zhu B.; Wu X.H.; Liu W.-J.; Zhang D.W. and Ding S.-J., High Performance On-Chip Energy Storage Capacitors with Plasma-Enhanced Atomic Layer-Deposited Hf0.5Zr0.5O2/Al-Doped Hf0.25Zr0.75O2 Nanofilms as Dielectrics, Nanomaterials, 2023, 13 (11), 1765.
3. Xiong W.; Huo J.Y.; Wu X.H.; Liu W.-J.; Zhang D.W. and Ding S.-J., High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO2 heterojunction charge trapping stack, Chinese Physics B, 2023, 32 (1), 018503.
4. Meng W.; Xiao D.Q.; Luo B.B.; Wu X.H.; Zhu B.; Liu W.-J. and Ding S.-J., Performance improvement of Hf0.45Zr0.55Ox ferroelectric field effect transistor memory with ultrathin Al–O bonds-modified InOx channels, Nanotechnology, 2023, 34 (17), 175204.
1. Zhang T.T.; Chen Y.T.; Chu Y.L.; Ding S.-J.; Liu W.-J. and Wu X.H., Flexible Perovskite and Organic Semiconductor Heterojunction Devices for Tunable Band-Selective Photodetection, ACS APPLIED ELECTRONIC MATERIALS, 2022, 4 (6), 2805-2814.
2. He Y.L.; Zheng G.; Wu X.H.; Liu W.-J.; Zhang D.W. and Ding S.-J., Superhigh energy storage density on-chip capacitors with ferroelectric Hf0.5Zr0.5O2/antiferroelectric Hf0.25Zr0.75O2 bilayer nanofilms fabricated by plasma-enhanced atomic layer deposition, Nanoscale Advances, 2022, 4, 4648.
3. Xiao, D.Q., Luo, B.B., Huang, C.M., Xiong, W., Wu, X.H. and Ding, S.-J., High Performance (Vth ~ 0 V, SS ~ 69 mV/dec, IOn/IOff ~ 10^10) Thin-Film Transistors Using Ultrathin Indium Oxide Channel and SiO2 Passivation, IEEE Transactions on Electron Devices, 2022, 69 (7), 3716-3721.
4. Wang, X.L.; Chen, Y.T.; Chu, Y.L.; Liu, W.-J.; Zhang, D.W.; Ding, S.-J.; Wu, X.H., Spectrum Reconstruction with Filter-Free Photodetectors Based on Graded-Band-Gap Perovskite Quantum Dot Heterojunctions, ACS Applied Materials & Interfaces, 2022, 14 (12), 14455-14465.
5. Chu, Y.L.; Tan, H.T.; Zhao, C.Y.; Wu, X.H.; Ding, S.-J., Power-Efficient Gas-Sensing and Synaptic Diodes Based on Lateral Pentacene/a-IGZO PN Junctions, ACS Applied Materials & Interfaces, 2022, 14 (7), 9368-9376.
6. Pi, T.T.; Xiao, D.Q.; Yang, H.; He, G.; Wu, X.H.; Liu, W.-J.; Zhang, D.W.; Ding, S.-J., High-Performance a-IGZO TFT Fabricated With Ultralow Thermal Budget via Microwave Annealing, IEEE Transactions on Electron Devices, 2022, 69 (1), 156-159.
7. Pei J.X.; Wu X.H.; Liu W.-J.; Zhang D.W. and Ding S.-J., Photoelectric Logic and In Situ Memory Transistors with Stepped Floating Gates of Perovskite Quantum Dots, ACS Nano, 2022, 16 (2), 2442-2451.
1. Xiao D.Q.; Luo B.B.; Xiong W.; Wu X.H.; Zhang D.W. and Ding S.-J., Low Thermal Budget Fabrication and Performance Comparison of MFM Capacitors With Thermal and Plasma-Enhanced Atomic Layer Deposited Hf0.45Zr0.55Ox Ferroelectrics, IEEE Transactions on Electron Devices, 2021, 68 (12), 6359-6364.
2. Pei, J.X.; Wu, X.H.; Huo, J.Y.; Liu, W.-J.; Zhang, D.W.; Ding, S.-J., High-bandwidth light inputting multilevel photoelectric memory based on thin-film transistor with a floating gate of CsPbBr3/CsPbI3 blend quantum dots, Nanotechnology, 2021, 32 (9), 095204.
3. Tan, H.T.; Chu, Y.L.; Wu, X.H.; Liu, W.-J.; Zhang, D.W.; Ding, S.-J., High-Performance Flexible Gas Sensors Based on Layer-by-Layer Assembled Polythiophene Thin Films, Chemistry of Materials, 2021, 33 (19), 7785-7794.
4. Li, L.K.; Wang, X.L.; Pei, J.X.; Liu, W.-J.; Wu, X.H.; Zhang, D.W.; Ding, S.-J., Floating-gate photosensitive synaptic transistors with tunable functions for neuromorphic computing, Science China-Materials, 2021, 64 (5), 1219-1229.
5. Chen, Y.T.; Zhao, C.Y.; Zhang, T.T.; Wu, X.H.; Zhang, W.J.; Ding, S.-J., Flexible and Filter-Free Color-Imaging Sensors with Multicomponent Perovskites Deposited Using Enhanced Vapor Technology, Small, 2021, 17 (26), 8.
1. Zhang, M.-N.; Wu, X.H.; Riaud, A.; Wang, X.-L.; Xie, F.X.; Liu, W.-J.; Mei, Y.F.; Zhang, D.W.; Ding, S.-J., Spectrum projection with a bandgap-gradient perovskite cell for colour perception, Light: Science & Applications, 2020, 162 (9).
2. Ding, S.-J.; Wu, X.H., Superior Atomic Layer Deposition Technology for Amorphous Oxide Semiconductor Thin-Film Transistor Memory Devices， Chem. Mater. 2020, 32, 1343−1357 (Invited Perspective)
3. Li, L.K.;Shao, Y.; Wang, X.L.; Wu, X.-H.; Liu, W.-J.; Zhang, D. W.; Ding, S.-J., Flexible Femtojoule Energy-Consumption In-Ga-Zn-O Synaptic Transistors With Extensively Tunable Memory Time. IEEE Transactions on Electron Devices, 2020, 67(1), 105-112.
4. Wang, X.-L.; Shao, Y.; Wu, X.H.; Zhang, M.N.; Li, L.K.; Liu, W.-J.; Zhang, D.W.; Ding, S.J., Light response behaviors of amorphous In-Ga-Zn-O thin film transistors via in situ interfacial hydrogen doping modulation. RSC Adv. 2020, 10, 3572-3578 .
5. Xie, L.-Y.; Xiao D.-Q.; Pei, J.-X.; Huo, J.Y.; Wu, X.H.; Liu, W.-J.; Ding S.-J., Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors, Materials Research Rxpress, 2020, 7 (4).
6. Liu, D.-D.; Pei, J.X.; Li, L.K.; Huo, J.Y.; Wu, X.H.; Liu, W.-J.; Ding S.-J., Multilevel memory and synaptic characteristics of a-IGZO thin-film transistor with atomic layer–deposited Al2O3/ZnO/Al2O3 stack layers, Journal of Materials Research, 2020, 35 (7), 732-737.
7. Wang, Y.-P.; Wu, X.H.; Liu, W.-J.; Zhang, D.W.; Ding, S.-J., Plasma-Enhanced Atomic Layer Deposition of Low Resistivity and Ultrathin Manganese Oxynitride Films with Excellent Resistance to Copper Diffusion, ACS Applied Electronic Materials, 2020, 2 (6), 1653-1660.
8. Zhang, M.-N.; Shao, Y.; Wang, X.-L.; Wu, X.H.; Liu, W.-J.; Ding, S.-J., Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels, Chin. Phys. B, 2020, 29 (7), 088503.
9.Huo, J.Y.; Wang, X.L.; Wu, X.H.; Liu, W.-J.; Ding, S.-J., Preparation and characterization of SnO films via reactive sputtering for ambipolar thin-film transistor applications, Semiconductor Science and Technology, 2020, 36 (2), 025004.
1. Liu, D.-D; Liu, W.-J; Pei,J.-X; Xie,L.-Y; Huo, J.Y.; Wu, X.-H; Ding, S.J.,Voltage-Polarity Dependent Programming Behaviors of Amorphous In–Ga–Zn–O Thin-Film Transistor Memory with an Atomic-Layer-Deposited ZnO Charge Trapping Layer， Nanoscale Research Letters 2019, 14,363
2. Zhu, B.; Wu, X.; Liu, W. J.; Lu, H. L.; Zhang, D. W.; Fan, Z.; Ding, S. J., High-Performance On-Chip Supercapacitors Based on Mesoporous Silicon Coated with Ultrathin Atomic Layer-Deposited In2O3 Films. ACS Appl Mater Interfaces 2019, 11 (1), 747-752.
3. Ding, Z.-J.; Zhu, B.; Liu, W.-J.; Wu, X.-H.; Ding, S.-J., The effect of NH3 plasma pulse time on atomic layer-deposited TiN films using tetrakis-(dimethylamino) titanium as a metal precursor. Japanese Journal of Applied Physics 2019, 58 (SH).
4. Zhu, B.; Wu, X.; Liu, W. J.; Ding, S. J.; Zhang, D. W.; Fan, Z., Dielectric Enhancement of Atomic Layer-Deposited Al2O3/ZrO2/Al2O3 MIM Capacitors by Microwave Annealing. Nanoscale Res Lett 2019, 14 (1), 53.
5. Zhu, B.; Ding, Z. J.; Wu, X.; Liu, W. J.; Zhang, D. W.; Ding, S. J., Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor. Nanoscale Res Lett 2019, 14 (1), 76.
6. Shao, Y.; Wu, X.; Zhang, M. N.; Liu, W. J.; Ding, S. J., High-Performance a-InGaZnO Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric. Nanoscale Res Lett 2019, 14 (1), 122.
7. Bian, Y.-J.; Cha, M.-Y.; Chen, L.; Sun, Q.-Q.; Zhang, W.; Ding, S.-J., Correlation between the formation of particle defects on sputtered Cu seed layers and Cu targets. Micro & Nano Letters 2019, 14 (10), 1079-1082.
8. Sun, S. M.; Liu, W. J.; Golosov, D. A.; Gu, C. J.; Ding, S. J., Investigation of energy band at atomic layer deposited AZO/β-Ga2O3 (201) heterojunctions. Nanoscale Res Lett 2019, 14 (1), 275.
9. Huan, Y. W.; Liu, W. J.; Tang, X. B.; Xue, X. Y.; Wang, X. L.; Sun, Q. Q.; Ding, S. J., Investigation of Nitridation on the Band Alignment at MoS2/HfO2 Interfaces. Nanoscale Res Lett 2019, 14 (1), 181.
1. Wang, Y.-P.; Ding, Z.-J.; Zhu, B.; Liu, W.-J.; Zhang, D. W.; Ding, S.-J., Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 2018, 36 (3).
2. Gao, J.; Liu, W.-J.; Ding, S.-J.; Lu, H.-L.; Zhang, D. W., High performance ultraviolet photodetectors with atomic-layer-deposited ZnO films via low-temperature post-annealing in air. AIP Advances 2018, 8 (1).
3. Zhu, B.; Liu, W.-J.; Ding, S.-J.; Zhang, D. W.; Fan, Z., Formation Mechanism of Heavily Doped Silicon Mesopores Induced by Pt Nanoparticle-Assisted Chemical Etching. The Journal of Physical Chemistry C 2018, 122 (37), 21537-21542.
4. Ding, Z.-J.; Wang, Y.-P.; Liu, W.-J.; Ding, S.-J.; Baklanov, M. R.; Zhang, D. W., Characterization of PECVD ultralow dielectric constant porous SiOCH films using triethoxymethylsilane precursor and cinene porogen. Journal of Physics D: Applied Physics 2018, 51 (11).
5. Ma, Q.; Shao, Y.; Wang, Y. P.; Zheng, H. M.; Zhu, B.; Liu, W. J.; Ding, S.-J.; Zhang, D. W., Rapid Improvement in Thin Film Transistors With Atomic-Layer-Deposited InOx Channels via O2 Plasma Treatment. IEEE Electron Device Letters 2018, 39 (11), 1672-1675.
6. Ma, Q.; Zheng, H. M.; Shao, Y.; Zhu, B.; Liu, W. J.; Ding, S. J.; Zhang, D. W., Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors. Nanoscale Res Lett 2018, 13 (1), 4.
7. Sun, S. M.; Liu, W. J.; Xiao, Y. F.; Huan, Y. W.; Liu, H.; Ding, S. J.; Zhang, D. W., Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga2O3 (201)Heterojunctions. Nanoscale Res Lett 2018, 13 (1), 412.
8. Zheng, H.-M.; Sun, S.-M.; Liu, H.; Huan, Y.-W.; Yang, J.-G.; Zhu, B.; Liu, W.-J.; Ding, S.-J., Performance Improvement in Hydrogenated Few-Layer Black Phosphorus Field-Effect Transistors. Chinese Physics Letters 2018, 35 (12).
9. Huan, Ya-Wei ; Wang, Xing-Lu ; Liu, Wen-Jun ; Dong, Hong ; Long, Shi-Bing; Sun, Shun-Ming ; Yang, Jian-Guo; Wu, Su-Dong ; Yu, Wen-Jie ; Horng, Ray-Hua; Xia, Chang-Tai ; Yu, Hong-Yu; Lu, Hong-Liang ; Sun, Qing-Qing; Ding, Shi-Jin ; Zhang, David Wei, Band alignment of indium-gallium-zinc oxide/β-Ga2O3(201) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy. Japanese Journal of Applied Physics 2018, 57(10), 100312.
10. Huan, Ya-Wei; Sun, Shun-Ming ; Gu, Chen-Jie ; Liu, Wen-Jun ; Ding, Shi-Jin ; Yu, Hong-Yu ; Xia, Chang-Tai ; Zhang, David Wei, Recent Advances in beta-Ga2O3-Metal Contacts. Nanoscale Research Letters 2018, 13 (1), 246.
11. Sun, S.-M.; Liu, W.-J.; Wang, Y.-P.; Huan, Y.-W.; Ma, Q.; Zhu, B.; Wu, S.-D.; Yu, W.-J.; Horng, R.-H.; Xia, C.-T.; Sun, Q.-Q.; Ding, S.-J.; Zhang, D. W., Band alignment of In2O3/β-Ga2O3 interface determined by X-ray photoelectron spectroscopy. Applied Physics Letters 2018, 113(3).
12. Zheng, H. M.; Gao, J.; Sun, S. M.; Ma, Q.; Wang, Y. P.; Zhu, B.; Liu, W. J.; Lu, H. L.; Ding, S. J.; Zhang, D. W., Effects of Al2O3 Capping and Post-Annealing on the Conduction Behavior in Few-Layer Black Phosphorus Field-Effect Transistors. IEEE Journal of the Electron Devices Society 2018, 6, 320-324.
13. Shao Yan ; Ding Shi-Jin, Effects of hydrogen impurities on performances and electrical reliabilities of indium-gallium-zinc oxide thin film transistors. Acta Physica Sinica 2018, 67 (9), 098502.
1. Qian, S. B.; Wang, Y. P.; Shao, Y.; Liu, W. J.; Ding, S. J., Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory. Nanoscale Res Lett 2017, 12 (1), 138.
2. Liu, W.-J.; Wang, Y.-H.; Zheng, L.-L.; Lu, H.-L.; Ding, S.-J., Stability enhancement of low temperature thin-film transistors with atomic-layer-deposited ZnO:Al channels. Microelectronic Engineering 2017, 167, 105-109.
3. Qian, S.-B.; Shao, Y.; Liu, W.-J.; Zhang, D. W.; Ding, S.-J., Erasing-Modes Dependent Performance of a-IGZO TFT Memory With Atomic-Layer-Deposited Ni Nanocrystal Charge Storage Layer. IEEE Transactions on Electron Devices 2017, 64 (7), 3023-3027.
4. Liu Qi-Xuan ; Wang Yong-Ping ; Liu Wen-Jun ; Ding Shi-Jin, Conduction mechanisms of MIM capacitors with ZrO2/SiO2/ZrO2 stacked dielectrics and Ni electrodes. Acta Physica Sinica, 2017, 66 (8), 087301.
1. Wang, Y.-P.; Ding, Z.-J.; Liu, Q.-X.; Liu, W.-J.; Ding, S.-J.; Zhang, D. W., Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors. Journal of Materials Chemistry C 2016, 4 (47), 11059-11066.
2. Zheng, L.-L.; Qian, S.-B.; Wang, Y.-H.; Liu, W.-J.; Ding, S.-J., Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs With Atomic Layer Deposited Al2O3/SiO2 Stacked Insulators. IEEE Journal of the Electron Devices Society 2016, 4 (5), 347-352.
3. Zheng, L.-L.; Ma, Q.; Wang, Y.-H.; Liu, W.-J.; Ding, S.-J.; Zhang, D. W., High Performance Unannealed a-InGaZnO TFT with an Atomic-Layer-Deposited SiO2 Insulator. IEEE Electron Device Letters 2016, 37 (6), 743-746.
4. Wang, Y.-H.; Ma, Q.; Zheng, L.-L.; Liu, W.-J.; Ding, S.-J.; Lu, H.-L.; Zhang, W., Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited ZnO-Channel/Al2O3-Dielectric. Chinese Physics Letters 2016, 33 (5).
5. Wang, Y.-H.; Ma, Q.; Zheng, L.-L.; Liu, W.-J.; Ding, S.-J.; Lu, H.-L.; Zhang, D. W., Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3Thin-Film Transistors by Low-Temperature Annealing in Air. IEEE Transactions on Electron Devices 2016, 63 (5), 1893-1898.
6. Wei, L.; Liu, Q. X.; Zhu, B.; Liu, W. J.; Ding, S. J.; Lu, H. L.; Jiang, A.; Zhang, D. W., Low-Cost and High-Productivity Three-Dimensional Nanocapacitors Based on Stand-Up ZnO Nanowires for Energy Storage. Nanoscale Res Lett 2016, 11 (1), 213.
7. Zhu, B.; Liu, W.-J.; Wei, L.; Ding, S.-J., Voltage-dependent capacitance behavior and underlying mechanisms in metal–insulator–metal capacitors with Al2O3–ZrO2–SiO2 nano-laminates. Journal of Physics D: Applied Physics 2016, 49 (13).
8. Liu, W. J.; Chen, L.; Zhou, P.; Sun, Q. Q.; Lu, H. L.; Ding, S. J.; Zhang, D. W., Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device. Journal of Nanomaterials 2016, 2016, 1-6.
1. Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun; Ding, Shi-Jin, Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al2O3/Pt nanocrystals/Al2O3 gate stack. AIP Advances 2015, 5 (12).
2. Zhang, W.-P.; Qian, S.-B.; Liu, W.-J.; Ding, S.-J.; Zhang, D. W., Novel Multi-Level Cell TFT Memory With an In–Ga–Zn-O Charge Storage Layer and Channel. IEEE Electron Device Letters 2015, 36 (10), 1021-1023.
3. Zhu, B.; Liu, W.-J.; Wei, L.; Zhang, D. W.; Jiang, A.; Ding, S.-J., Voltage linearity modulation and polarity dependent conduction in metal-insulator-metal capacitors with atomic-layer-deposited Al2O3/ZrO2/SiO2 nano-stacks. Journal of Applied Physics 2015, 118 (1).
4. Hu, J.; Zhang, J.; Fu, Z.; Weng, J.; Chen, W.; Ding, S.; Jiang, Y.; Zhu, G., Fabrication of electrically bistable organic semiconducting/ferroelectric blend films by temperature controlled spin coating. ACS Appl Mater Interfaces 2015, 7 (11), 6325-30.
5. Zhang, W.-P.; Chen, S.; Qian, S.-B.; Ding, S.-J., Effects of thermal annealing on the electrical characteristics of In-Ga-Zn-O thin-film transistors with Al2O3 gate dielectric. Semiconductor Science and Technology 2015, 30 (1).
1. Qiu-Xiang, Z.; Bao, Z.; Shi-Jin, D.; Hong-Liang, L.; Qing-Qing, S.; Peng, Z.; Wei, Z., Full ALD Al2O3/ZrO2/SiO2/ZrO2/Al2O3 Stacks for High-Performance MIM Capacitors. IEEE Electron Device Letters 2014, 35 (11), 1121-1123.
2. Hu, J.; Zhang, J.; Fu, Z.; Jiang, Y.; Ding, S.; Zhu, G., Solvent vapor annealing of ferroelectric P(VDF-TrFE) thin films. ACS Appl Mater Interfaces 2014, 6 (20), 18312-8.
Jiang, T.; Zhu, B.; Ding, S.-J.; Fan, Z.; Zhang, D. W., High-performance ultralow dielectric constant carbon-bridged mesoporous organosilica films for advanced interconnects. J. Mater. Chem. C 2014, 2 (32), 6502-6510.
3. Zhang, Q.-X.; Zhu, B.; Zhang, L.-F.; Ding, S.-J., Atomic-layer-deposited SiO2/TiO2/SiO2 sandwiched dielectrics for metal–insulator–metal capacitor application. Microelectronic Engineering 2014, 122, 1-4.
4. Chen, S.; Zhang, W.-P.; Cui, X.-M.; Ding, S.-J.; Sun, Q.-Q.; Zhang, W., Monochromatic light-assisted erasing effects of In-Ga-Zn-O thin film transistor memory with Al2O3/Zn-doped Al2O3/Al2O3 stacks. Applied Physics Letters 2014, 104 (10).
1. Lan, L.; Gou, H.-Y.; Ding, S.-J.; Zhang, W., Low voltage program-erasable Pd-Al2O3-Si capacitors with Ru nanocrystals for nonvolatile memory application. Chinese Physics B 2013, 22 (11).
2. Chen, Sun; Cui, Xing-Mei; Ding, Shi-Jin; Sun, Qing-Qing; Nyberg, Tomas; Zhang, Shi-Li; Zhang, Wei, Novel Zn-Doped Al2O3 Charge Storage Medium for Light-Erasable In-Ga-Zn-OTFT Memory. IEEE Electron Device Letters 2013, 34(8), 1008-1010.
3. Cui, X.-M.; Chen, S.; Ding, S.-J.; Sun, Q.-Q.; Nyberg, T.; Zhang, S.-L.; Zhang, W., Unique UV-Erasable In-Ga-Zn-O TFT Memory With Self-Assembled Pt Nanocrystals. IEEE Electron Device Letters 2013, 34 (8), 1011-1013.
4. Guo, J.-J.; Li, M.-D.; Sun, Q.-Q.; Yang, W.; Zhou, P.; Ding, S.-J.; Zhang, D. W., A Water-free Low Temperature Process for Atomic Layer Deposition of Al2O3 Films. Chemical Vapor Deposition 2013, 19 (4-6), 156-160.
5. Zhang, L.-F.; Xu, H.; Zhang, Q.-X.; Ding, S.-J.; Zhang, D. W., Reactively sputtered HfO2 and Ba(Zr0.2Ti0.8)O3–HfO2 dielectrics for metal–insulator–metal capacitor applications. Microelectronic Engineering 2013, 106, 96-99.
6. Ding, Shi-Jin; Chen, Hong-Bing; Cui, Xing-Mei; Chen, Sun; Sun, Qing-Qing; Zhou, Peng; Lu, Hong-Liang; Zhang, David Wei; Shen, Chen, Atomic layer deposition of high-density Pt nanodots on Al2O3 film using(MeCp)Pt(Me)3 and O2 precursors for nonvolatile memory applications, Nanoscale Research Letters 2013, 8(80).
7. Gou, H.-Y.; Chen, S.; Ding, S.-J.; Sun, Q.-Q.; Lu, H.-L.; Zhang, D. W.; Wang, P.-F., Influence of HfAlO composition on memory effects of metal-oxide-semiconductor capacitors with Al2O3/HfAlO/Al2O3 layers and Pd electrode. Thin Solid Films 2013, 529, 380-384.